http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Freescale Semiconductor Electronic Components Datasheet

MW5IC2030NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW5IC2030NBR1 pdf
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA,
(IDPQilo2 t=,
S2y3n0cm, PAa,gPinougt,
= 5 Watts Avg.,
Traffic Codes 8
Full Frequency Band, IS - 95 CDMA
Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
S2T4yyp0niccm,aAPl C,aPgDionMugtA,=TP1reaWrfffoiacrtmtCAaovndgce.es,:F8VuTDllhDFr=oreu2qg7uheV1no3cl)tys, ,BCIahDnaQdn1,n=IeSl2-B290a5nmCdAwD,iMdIDtAhQ=2(P=ilot,
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
Pout.
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW5IC2030N
Rev. 7, 1/2006
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
VDS1
VRD2
VRG2
RFin
VRD1
VRG1/VGS1
VGS2
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
VDS2/RFout
GND
VDS1
VRD2
VRG2
GND
RFin
VRD1
VRG1/VGS1
VGS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15 NC
14
VDS2/
RFout
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC2030NBR1 MW5IC2030GNBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW5IC2030NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW5IC2030NBR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +15
- 65 to +175
200
20
Value (1,2)
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
CDMA Application
(Pout = 5 W CW)
Stage 1, 27 Vdc, IDQ = 160 mA
Stage 2, 27 Vdc, IDQ = 230 mA
4.89
1.75
PHS Application
(Pout = 12.6 W CW)
Stage 1, 26 Vdc, IDQ = 300 mA
Stage 2, 26 Vdc, IDQ = 1300 mA
Table 3. ESD Protection Characteristics
4.85
1.61
Test Conditions
Class
Human Body Model
1B (Minimum)
Machine Model
A (Minimum)
Charge Device Model
3 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
CDMA Functional Tests (In Freescale 1900 MHz Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 160 mA, IDQ2 = 230 mA, Pout =
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ± 885 kHz Offset. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Gps 21.5 23 — dB
Drain Efficiency
ηD 18 20 — %
Input Return Loss
IRL — - 18 - 10 dB
Adjacent Channel Power Ratio
ACPR
- 49 - 47 dBc
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
GF — 0.2 0.3 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030NBR1 MW5IC2030GNBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW5IC2030NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 16 Pages
PDF Download
MW5IC2030NBR1 pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 MW5IC2030NBR1 RF LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor
Freescale Semiconductor
MW5IC2030NBR1 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components