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MW6IC2015GNBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband on - chip
design makes it usable from 1805 to 1990 MHz. The linearity performances
cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS,
TDMA, CDMA, W - CDMA and TD - SCDMA.
Final Application
Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 =
1197300m- A19, 9P0ouMt =Hz1)5 Watts PEP, Full Frequency Band (1805 - 1880 MHz or
Power Gain — 26 dB
Power Added Efficiency — 28%
IMD — - 30 dBc
Driver Application
T1197yp30i0cma- A1l 9G, 9PS0oMuMt E=HDz3)GWEaPttesrAfovrgm.,aFncuell:FVreDqDu=en2c6yVBoaltnsd, I(D1Q810=5 -1138080mAM,HIDzQo2r =
Power Gain — 27 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset = - 69 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 0.8% rms
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
200°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation
RFout/VDS2
Figure 1. Functional Block Diagram
Document Number: MW6IC2015N
Rev. 2, 2/2007
MW6IC2015NBR1
MW6IC2015GNBR1
1805 - 1990 MHz, 15 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW6IC2015NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW6IC2015GNBR1
GND 1
VDS1
NC
2
3
NC 4
NC 5
16 GND
15 NC
RFin
NC
VGS1
VGS2
NC
GND
6
7
8
9
10
11
14 RFout /
VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW6IC2015GNBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW6IC2015GNBR1 pdf
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +68
- 0.5, +6
- 65 to +200
200
20
Value (1)
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
Final Application
(Pout = 15 W CW)
Stage 1, 26 Vdc, IDQ1 = 100 mA
Stage 2, 26 Vdc, IDQ2 = 170 mA
4.3
1.2
Driver Application
(Pout = 3 W CW)
Stage 1, 26 Vdc, IDQ1 = 130 mA
Stage 2, 26 Vdc, IDQ2 = 170 mA
Table 3. ESD Protection Characteristics
4.3
1.3
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In Freescale 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W
PEP, f1 = 1930 MHz, f2 = 1930.1 MHz and f1 = 1990 MHz, f2 = 1990.1 MHz, Two - Tone CW
Power Gain
Gps 24 26 — dB
Power Added Efficiency
PAE 26 28 — %
Intermodulation Distortion
IMD — - 30 - 27 dBc
Input Return Loss
IRL — — - 10 dB
Typical Two - Tone Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout =
15 W PEP, 1805 - 1880 MHz, Two - Tone CW, 100 kHz Tone Spacing
Power Gain
Gps — 26 — dB
Power Added Efficiency
PAE — 28 — %
Intermodulation Distortion
IMD — - 30 — dBc
Input Return Loss
IRL — - 10 — dB
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2015NBR1 MW6IC2015GNBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW6IC2015GNBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 28 Pages
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