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MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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MW6IC2240NBR1 pdf
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on -chip
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical 2 -Carrier W
210 mA, IDQ2 = 370
-mCAD,MPAouPt =er4fo.5rmWaantctes:AVvDgD.,
=Fu2l8l FVroelqtsu,eInDcQy1
=
Band
(2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB
@ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
3T201yp07i0cmaMAl H2, Iz-DC)Q,aC2rrh=iea3rn2Wn0e-lmCBADa,nMPdAowuPitd=ethr2fo=5rm3d.Ba8mn4c,MeF:HuVzllD,FDPrAe=Rq2u8=enV8co.5yltsdB,BaIDn@dQ1(02=.10110%-
Probability on CCDF.
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
Pout.
Characterized with Series Equivalent Large -Signal Impedance Parameters
and Common Source Scattering Parameters
On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead -Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2240N
Rev. 1, 1/2006
MW6IC2240NBR1
MW6IC2240GNBR1
2110 -2170 MHz, 4.5 W AVG., 28 V
2 x W -CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2240NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2240GNBR1
VDS1
GND 1
VDS1
NC
2
3
NC 4
16 GND
15 NC
NC 5
RFin
RFout/VDS2
RFin 6
14 RFout /
VDS2
NC 7
VGS1 Quiescent Current
VGS2 Temperature Compensation
VDS1
VGS1
VGS2
VDS1
GND
8
9
10
11
13 NC
12 GND
(Top View)
Figure 1. Functional Block Diagram
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2240NBR1 MW6IC2240GNBR1
1


Freescale Semiconductor Electronic Components Datasheet

MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

No Preview Available !

MW6IC2240NBR1 pdf
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TJ
Pin
Symbol
RθJC
Value
-0.5, +68
-0.5, +6
-65 to +200
200
23
Value (1,2)
Unit
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
W-CDMA Application
(Pout = 4.5 W Avg.)
Stage 1, 28 Vdc, IDQ = 210 mA
Stage 2, 28 Vdc, IDQ = 370 mA
1.8
1.0
W-CDMA Application
(Pout = 40 W CW)
Stage 1, 28 Vdc, IDQ = 110 mA
Stage 2, 28 Vdc, IDQ = 370 mA
Table 3. ESD Protection Characteristics
2.0
0.87
Test Methodology
Human Body Model (per JESD22-A114)
Class
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak
Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout
= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel
Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 25.5 28 30 dB
Power Added Efficiency
PAE 13.7
15
%
Intermodulation Distortion
IM3 — -43 -40 dBc
Adjacent Channel Power Ratio
ACPR
-46 -43 dBc
Input Return Loss
IRL — -15 -10 dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW6IC2240NBR1 MW6IC2240GNBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW6IC2240NBR1
Description RF LDMOS Wideband Integrated Power Amplifiers
Maker Freescale Semiconductor
Total Page 16 Pages
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