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2SK3988-01 Datasheet Preview

2SK3988-01 Datasheet

N-Channel Silicon MOSFET

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2SK3988-01 pdf
2SK3988-01 FUJI POWER MOSFET
Super FAP-G Serieswww.DataSheet4U.com
200511
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS
600 V
VDSX
600 V VGS=-30V
Continuous drain current
ID
3.0 A
Pulsed drain current
ID(puls]
±12.0
A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR
3.0 A Note *1
Non-repetitive
Maximum avalanche energy
EAS
237.3 mJ Note *2
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
EAR
dVDS/dt
dV/dt
6.0
20
5
mJ Note *3
kV/μs VDS <=600V
kV/μs Note *4
Maximum power dissipation
Operating and storage
PD
Tch
60
2.02
+150
W
W
°C
Tc=25°C
Ta=25°C
temperature range
Tstg -55 to +150 °C
Note *1 Tch<=150°C
Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Symbol
BVDSS
VGS(th)
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
ID= 250μA VGS=0V
ID= 250μA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=1.5A VGS=10V
ID=1.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=1.5A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
VCC=300V
ID=3.0A
VGS=10V
IF=3.0A VGS=0V Tch=25°C
IF=3.0A VGS=0V
-di/dt=100A/μs Tch=25°C
Test Conditions
channel to case
channel to ambient
Min.
600
3.0
1.5
Typ.
2.64
3.0
330
50
2.5
11
5.0
23
10
13
5.5
2.8
1.00
0.5
2.3
Max. Units
V
5.0
25
V
μA
250
100 nA
3.30 Ω
S
500 pF
75
5.0
18
ns
7.5
35
15
20
8.5
nC
4.2
1.50 V
μs
μC
Min. Typ.
Max. Units
2.083 °C/W
62.0 °C/W
1



Fuji
Fuji

2SK3988-01 Datasheet Preview

2SK3988-01 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

2SK3988-01 pdf
2SK3988-01(600V/3.0A/3.3Ω)
www.DataSheet4U.com
Characteristics
FUJI POWER MOSFET
2


Part Number 2SK3988-01
Description N-Channel Silicon MOSFET
Maker Fuji
Total Page 4 Pages
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