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Fuji Electric
Fuji Electric

2SK3789-01R Datasheet Preview

2SK3789-01R Datasheet

N-CHANNEL SILICON POWER MOSFET

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2SK3789-01R pdf
2SK3789-01R
N-CHANNEL SILICON POWER MOSFET
FUJI POWERwww.DataSheet4U.com MOSFET
Super FAP-G Series
Outline Drawings (mm) 200406
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
150
VDSX
150
Continuous Drain Current
ID
92
Pulsed Drain Current
ID(puls]
±368
Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
92
Non-Repetitive
EAS 1205.7
Maximum Avalanche Energy
Repetitive
EAR 41
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
210
3.13
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS=< 150V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch<= 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=37A,L=1.29mH,
VCC=48V,RG=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:IF<= -ID, -di/dt=50A/µs,VCC<= BVDSS,Tch<= 150°C
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V VDS=0V
ID=46A VGS=10V
Tch=25°C
Tch=125°C
ID=46A VDS=25V
VDS=75V
VGS=0V
f=1MH
VCC=48V ID=46A
VGS=10V
RGS=10
VCC=75V
ID=92A
VGS=10V
IF=92A VGS=0V Tch=25°C
IF=92A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
150
3.0
12
Typ.
21
24
3800
530
35
40
112
56
30
80
30
25
1.20
250
2.0
Max. Units
V
5.0 V
25 µA
250
100 nA
26 m
S
5400
pF
795
52.5
60
ns
168
84
45
120 nC
45
38
1.50 V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.595 °C/W
40.0 °C/W
www.fujielectric.co.jp/fdt/scd
1



Fuji Electric
Fuji Electric

2SK3789-01R Datasheet Preview

2SK3789-01R Datasheet

N-CHANNEL SILICON POWER MOSFET

No Preview Available !

2SK3789-01R pdf
2SK3789-01R
FUJI POWER MOSFET
Characteristics
www.DataSheet4U.com
Allowable Power Dissipation
PD=f(Tc)
300
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
140
120 20V
10V 8V
100
200
80
100
0
0 25 50 75 100 125 150
Tc [°C]
60
40
20
0
0
7V
6.5V
VGS=6.0V
5
VDS [V]
10
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.15
VGS=6V 6.5V
7V
1
0.1
0.1
1 10
ID [A]
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=36.5A,VGS=10V
0.15
0.10
0.05
8V
10V
20V
0.00
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
ID [A]
0.10
0.05
max.
typ.
0.00
-50
-25
0
25 50 75 100 125 150
Tch [°C]
2


Part Number 2SK3789-01R
Description N-CHANNEL SILICON POWER MOSFET
Maker Fuji Electric
Total Page 4 Pages
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