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FAP-450 Datasheet Preview

FAP-450 Datasheet

N-channel MOS-FET

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FAP-450 pdf
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
FAP-450
FAP-IIS Series
N-channel MOS-FET
500V 0,38Ω 14A 190W
> Outline Drawing
> Applications
- Switching Regulators
- UPS
- DC-DC converters
www.DataSheet4U.com
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
500 V
Continous Drain Current
I D 14 A
Pulsed Drain Current
I D(puls)
56 A
Gate-Source-Voltage
Avalanche Current
Maximum Avalanche Energy
V GS
I AR
E AS
±30
14*2
760*1
V
A
mJ
Max. Power Dissipation
P D 190 W
Operating and Storage Temperature Range
T ch
150 °C
T stg
-55 ~ +150
°C
*1) VCC = 50V; L = 7mH; IAS = 14A; RG = 50 ; Starting Tch = 25°C (See Fig. 1 & 2)
*2) Repetitive Rating : Pulse Width limited by max. Channel Temperature
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=250µA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=500V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=8A
VGS=10V
Forward Transconductance
g fs ID=8A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=250V
t r VGS=10V
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
RG = 6,1W
Avalanche Capability
t f RD = 20
I AV
L = 100µH
Tch=25°C
Total Gate Charge
C iss
VCC=400V
Gate-Source Charge
C oss
VGS=10V
Gate-Drain Charge
C rss
ID = 14A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
500
3,0
7
4
Typ. Max.
3,0
10
0,32
14
2200
330
140
18
70
130
70
4,0
25
1,0
100
0,38
170
20
90
1,0 1,5
700
9,0
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
nC
nC
nC
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to ambient
channel to case
Min. Typ. Max. Unit
35 °C/W
0,65 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com



Fuji Electric
Fuji Electric

FAP-450 Datasheet Preview

FAP-450 Datasheet

N-channel MOS-FET

No Preview Available !

FAP-450 pdf
N-channel MOS-FET
500V 0,38Ω 14A 190W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
FAP-450
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=8A; VGS=10V; 80µs pulse test
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C
1
2
3
www.DataSheet4U.com VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=250µA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Max. Avalanche Energy Derating
vs. Starting Channel Temperature
Eas=f(starting Tch): Peak IL = 14A; VCC=50V
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
9
VDS [V]
Allowable Power Dissipation vs. TC
PD=f(Tc)
Starting Tch [°C]
Safe Operation Area
ID=f(VDS): Single Pulse, Tc=25°C
10 12
VSD [V]
Transient Thermal impedance
Zth(ch-c=f(t); D=t/T
Zthch=f(t) parameter:D=t/T
Tc [°C]
VDS [V]
This specification is subject to change without notice!
t [s]


Part Number FAP-450
Description N-channel MOS-FET
Maker Fuji Electric
Total Page 3 Pages
PDF Download
FAP-450 pdf
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