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2SB1375 Datasheet Preview

2SB1375 Datasheet

Silicon PNP Triple Diffused Type

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2SB1375 pdf
Silicon PNP Triple Diffused Type
FEATURES
z Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
z High Power Dissipation:PC=25W(TC=25) Lead-free
z Complements the 2SD2012.
Production specification
2SB1375
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25
Tc=25
Junction and Storage Temperature
-60 V
-7 V
-3 A
-0.5 A
2.0
W
25
-55 to +150
X015
Rev.A
www.gmicroelec.com
1



GME
GME

2SB1375 Datasheet Preview

2SB1375 Datasheet

Silicon PNP Triple Diffused Type

No Preview Available !

2SB1375 pdf
Production specification
Silicon PNP Triple Diffused Type
2SB1375
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA,IB=0
-60
V
Collector Cut-off Current
ICBO VCB=-60V,IE=0
-10 μA
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-emitter Saturation Voltage VCE(sat)
VEB=-7V,IC=0
-10
VCE=-5V,IC=-0.5A
VCE=-5V,IC=-2A
100
15
320
IC=-2A, IB=-0.2A
-1.0 -1.5
μA
V
Base-emitter Voltage
VBE IC=-0.5A, VCE=-5V
-0.75 -1.0
V
Transition Frequency
Collector Output Capacitance
fT VCE=-5V, IE=-0.5A
Cob
VCB=-10V,IE=0,f=1
MHz
9
50
MHz
pF
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X015
Rev.A
www.gmicroelec.com
2


Part Number 2SB1375
Description Silicon PNP Triple Diffused Type
Maker GME
Total Page 4 Pages
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