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G152B Datasheet Preview

G152B Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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G152B pdf
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Pb Free Plating Product
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-20V
0.3
-0.7A
Description
The G152B provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
Low On-State Resistance:0.3 (max)
Ultra High Speed Switching
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery System
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-20
12
-0.7
-2.8
0.5
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
W
W/
Unit
/W
1/4



GTM
GTM

G152B Datasheet Preview

G152B Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

G152B pdf
ISSUED DATE :2005/01/26
REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
-0.1
-
V/ Reference to 25 , ID=-1mA
Gate Threshold Voltage
VGS(th) -0.5 - -1.2 V VDS=VGS, ID=-1mA
Forward Transconductance
gfs
- 1.5 -
S VDS=-10V, ID=-0.4A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 12V
Drain-Source Leakage Current(Tj=25 ) IDSS - - -10 uA VDS=-20V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
-
-
135 300 m VGS=-4.5V, ID=-0.4A
192 500
VGS=-2.5V, ID=-0.4A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 5.2 10
ID=-0.7A
Qgs
- 1.36 -
nC VDS=-10.0V
Qgd - 0.6 -
VGS=-6.0V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
5
-
Tr
Td(off)
-
-
20
55
-
-
VDD=-10V
ns ID=-0.4A
VGS=-5V
Tf - 70 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 180 -
- 120 -
- 60 -
VGS=0V
pF VDS=-10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
-1.1
Unit Test Conditions
V IS=-0.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270
/W when mounted on min. copper pad.
2/4


Part Number G152B
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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G152B pdf
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