http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





GTM
GTM

GBC546 Datasheet Preview

GBC546 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

GBC546 pdf
www.DataSheet4U.com
GBC546
NPN SILICON TRANSISTOR
Description
The GBC546 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 110~800 @VCE=5V, IC=2mA
Complementary to GBC556
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
80
65
6
100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
80 - - V IC=100uA, IE=0
65 - - V IC=1mA, IB=0
BVEBO
ICES
6 - - V IE=10uA, IC=0
- - 15 nA VCE=70V, VBE=0
*VCE(sat)1
- 0.09 0.25 V IC=10mA, IB=0.5mA
*VCE(sat)2
*VBE(sat)
- 0.2 0.6 V IC=100mA, IB=5mA
- 0.7 -
V IC=10mA, IB=0.5mA
*VBE(on)1
0.55 - 0.7 V VCE=5V, IC=2mA
*VBE(on)2
*hFE
- - 0.77 V VCE=5V, IC=10mA
110 - 800
VCE=5V, IC=2mA
fT 150 300 - MHz VCE=5V, IC=10mA, f=100MHz
Cob - 1.7 4.5 pF VCB=10V, IC=0, f=1MHz
Classification Of hFE
Rank
A
Range
110 ~ 220
B
200 ~ 450
C
420 ~ 800
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC546
Page: 1/2



GTM
GTM

GBC546 Datasheet Preview

GBC546 Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

GBC546 pdf
Characteristics Curve
ISSUED DATE :2005/03/25
REVISED DATE :2005/10/21B
Fig 1. DC Current Gain
Fig 2. Saturation Region
Fig 3. “On” Voltages
Fig 4. Temperature Coefficients
Fig 5. Capacitances
Fig 6. Bandwidth Product
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC546
Page: 2/2


Part Number GBC546
Description NPN SILICON TRANSISTOR
Maker GTM
Total Page 2 Pages
PDF Download
GBC546 pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 GBC546 NPN SILICON TRANSISTOR GTM
GTM
GBC546 pdf
2 GBC547 NPN SILICON TRANSISTOR GTM
GTM
GBC547 pdf
3 GBC548 NPN SILICON TRANSISTOR GTM
GTM
GBC548 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components