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GBC558 Datasheet Preview

GBC558 Datasheet

PNP EPITAXIAL TRANSISTOR

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GBC558 pdf
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GBC558
PNP SILICON TRANSISTOR
Description
The GBC558 is designed for drive and output-stages of audio amplifiers.
Features
High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA
Complementary to GBC548
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/10/21
REVISED DATE :
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (continuous)
IC
Total Device Dissipation @ TA =25
Derate above 25
PD
Total Device Dissipation @ TC =25
Derate above 25
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance, Junction to Ambient
R JA
Thermal Resistance, Junction to Case
R JC
Ratings
-30
-30
-5
-100
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/
W
mW/
/W
/W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-30 - - V IC=-100uA, IE=0
BVCEO
BVEBO
-30 - - V IC=-2mA, IB=0
-5 - - V IE=-100uA, IC=0
ICES
*VCE(sat)1
-
-
-100
nA VCE=-20V, VBE=0
-
-0.075
-0.3
V IC=-10mA, IB=-0.5mA
*VCE(sat)2
-
-0.25
-0.65
V IC=-100mA, IB=-5mA
*VBE(sat)1
- -0.7 -
V IC=-10mA, IB=-0.5mA
*VBE(sat)2
*VBE(on)1
-
-0.55
-1.0
-0.62
-
-0.7
V IC=-100mA, IB=-5mA
V VCE=-5V, IC=-2mA
*VBE(on)2
*hFE
- -0.7 -0.82
120 - 800
V VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
fT - 360 - MHz VCE=-5V, IC=-10mA, f=100MHz
Cob - 3.0 6.0 pF VCB=-10V, IC=0, f=1MHz
Classification Of hFE
Rank
A
Range
120 ~ 220
B
180 ~ 460
C
420 ~ 800
*Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GBC558
Page: 1/2



GTM
GTM

GBC558 Datasheet Preview

GBC558 Datasheet

PNP EPITAXIAL TRANSISTOR

No Preview Available !

GBC558 pdf
Characteristics Curve
ISSUED DATE :2005/10/21
REVISED DATE :
Fig 1. DC Current Gain
Fig 2. Collector Saturation Region
Fig 3. “Saturation” & “On” Voltages
Fig 4. Temperature Coefficients
Fig 5. Capacitances
Fig 6. Bandwidth Product
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GBC558
Page: 2/2


Part Number GBC558
Description PNP EPITAXIAL TRANSISTOR
Maker GTM
Total Page 2 Pages
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