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GSS9980 Datasheet Preview

GSS9980 Datasheet

POWER MOSFET

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GSS9980 pdf
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Pb Free Plating Product
ISSUED DATE :2005/11/16
REVISED DATE :
GSS9980
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
80V
52m
4.6A
Description
The GSS9980 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*High Breakdown Voltage
*Low Gate Change
*Single Drive Requirement
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
80
±20
4.6
2.9
30
2
0.016
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
62.5
Unit
/W
GSS9980
Page: 1/4



GTM
GTM

GSS9980 Datasheet Preview

GSS9980 Datasheet

POWER MOSFET

No Preview Available !

GSS9980 pdf
ISSUED DATE :2005/11/16
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
80
-
1.0
-
-
-
0.08
-
7
-
-
-
3.0
-
±100
V VGS=0, ID=1mA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=4A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=80V, VGS=0
- 25 uA VDS=64V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 52 m VGS=10V, ID=4.6A
- 60
VGS=4.5V, ID=3.6A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 19 30
ID=4A
Qgs - 5 - nC VDS=64V
Qgd - 10 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=40V
Tr
Td(off)
-
-
6
30
-
-
ID=1A
ns VGS=10V
RG=3.3
Tf - 16 -
RD=40
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1820 2910
VGS=0V
- 130 -
pF VDS=25V
- 94 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
44
90
Max.
1.2
-
-
Unit Test Conditions
V IS=1.6A, VGS=0V
ns IS=4A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS9980
Page: 2/4


Part Number GSS9980
Description POWER MOSFET
Maker GTM
Total Page 4 Pages
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