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GT2623 Datasheet Preview

GT2623 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GT2623 pdf
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Pb Free Plating Product
ISSUED DATE :2005/05/06
REVISED DATE :
GT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
170m
-2.0A
Description
The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2623 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
-30
20
-2
-1.6
-20
1.2
0.01
-55 ~ +150
Ratings
110
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4



GTM
GTM

GT2623 Datasheet Preview

GT2623 Datasheet

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

GT2623 pdf
ISSUED DATE :2005/05/06
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.02
-
2
-
-
-
-3.0
-
100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-2.0A
nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 170 m VGS=-10V, ID=-2.0A
- 280
VGS=-4.5V, ID=-1.6A
2.8 4.5
ID=-2.0A
0.5 - nC VDS=-24V
1.4 -
VGS=-4.5V
5-
VDS=-15V
6-
ID=-1.0A
15
-
ns VGS=-10V
RG=3.3
3-
RD=15
150 240
42 -
32 -
VGS=0V
pF VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20
13
Max.
-1.2
-
-
Unit Test Conditions
V IS=-1.0A, VGS=0V
ns IS=-2.0A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
2/4


Part Number GT2623
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
Total Page 4 Pages
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