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Galaxy Semi-Conductor
Galaxy Semi-Conductor

SD103CW Datasheet Preview

SD103CW Datasheet

Schottky Barrier Diode

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SD103CW pdf
BL Galaxy Central Micro-electrical
Production specification
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
FEATURES
z Low Forward Voltage Drop.
z Guard Ring Construction For Transient
Protection.
z Negligible Reverse Recovery Time.
z Low Reverse Capacitance.
Pb
Lead-free
APPLICATIONS
z Schotty barrier switching.
SOD-123
ORDERING INFORMATION
Type No.
Marking
SD103AW
SD103BW
SD103CW
S4
S5
S6
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol SD103AW SD103BW SD103CW Unit
Peak Repetitive Peak reverse voltage
VRR
Working Peak
DC Reverse Voltage
VRWM
40
30
20
V
VR
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
IF 350
mA
Repetitive Peak Forward Current @t1.0s IFRM
1.5
A
Power Dissipation
Pd 400
mW
Thermal Resistance Junction to Ambient
Storage temperature
RθjA
Tstg
300
-65~+125
/W
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSKA014
Rev.A
www.galaxycn.com
1



Galaxy Semi-Conductor
Galaxy Semi-Conductor

SD103CW Datasheet Preview

SD103CW Datasheet

Schottky Barrier Diode

No Preview Available !

SD103CW pdf
BL Galaxy Central Micro-electrical
Production specification
Schottky Barrier Diode
SD103AW/SD103BW/SD103CW
Parameter
Reverse Breakdown Voltage
SD103AW
SD103BW
SD103CW
Symbol
V(BR)R
Min.
40
30
20
Typ.
Forward voltage
Reverse current
SD103AW
SD103BW
SD103CW
Capacitance between terminals
Reverse Recovery Time
VF
IRM
CT
trr
50
10
Max. Unit
V
0.37
0.60
V
5.0 μA
pF
ns
Conditions
IR=10μA
IR=10μA
IR=10μA
IF=20mA
IF=200mA
VR=30V
VR=20V
VR=10V
VR=0,f=1MHz
IR=IF=200mA
Irr=0.1*IR,RL=100
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSKA014
Rev.A
www.galaxycn.com
2


Part Number SD103CW
Description Schottky Barrier Diode
Maker Galaxy Semi-Conductor
Total Page 3 Pages
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SD103CW pdf
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SD103CW pdf
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