| Description | www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Marking R23/R24/R25... |
| Features |
z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz
Production specification
2SC3356W
Pb
Lead-free
z
High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor. SOT-323
ORDERING INFORMATION
Type No. 2SC3356W Marking R23/R24/R25 Package Code SOT-323
MAXIMUM RATING...
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| Datasheet |
 2SC3356W Datasheet - 196.65KB |
