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GeneSiC
GeneSiC

A-GA10JT12 Datasheet Preview

A-GA10JT12 Datasheet

Super Junction Transistor

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A-GA10JT12 pdf
A-GA10JT12
Normally – OFF Silicon Carbide
Super Junction Transistor
VDS
I
D
RDS(ON)
= 1200 V
= 7A
= 220 mȍ
Features
225 oC maximum operating temperature
Best in class temperature independent switching
and blocking performance
Lowest VDS(ON) as compared to any other SiC switch
Suitable for connecting an anti-parallel diode
Gate oxide free SiC switch
Positive temperature coefficient for easy paralleling
Low gate charge
Low intrinsic capacitance
Advantages
Low switching losses
Higher efficiency
Package
D
G
S
Applications
Ideal for Aerospace and Defense Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Maximum Ratings, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source Voltage
DC-Drain Current
Gate Peak Current
Power dissipation
Operating and storage temperature
Symbol
VDS
IDM
IGM
Ptot
Tj, Tstg
Conditions
TC ” 140 °C
TC = 25 °C
Values
1200
7
1.5
159
-55 to 175
Unit
V
A
A
W
°C
Electrical Characteristics, at Tj = 175 °C, unless otherwise specified
Parameter
Drain – Source On resistance
Drain leakage current
Symbol
RDS(ON)
IDSS
Conditions
IF = 7 A, Tj = 25 °C
IF = 7 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
Thermal Characteristics
Thermal resistance, junction - case
RthJC
min.
Values
typ.
220
390
0.1
0.5
max.
Unit
mȍ
μA
0.95
°C/W
January 2011
Preliminary Datasheet
http://www.genesicsemi.com
Page 1 of 3



GeneSiC
GeneSiC

A-GA10JT12 Datasheet Preview

A-GA10JT12 Datasheet

Super Junction Transistor

No Preview Available !

A-GA10JT12 pdf
A-GA10JT12
Figure 1: Typical Output Characteristics at 25 oC
Figure 2: Typical Output Characteristics at 125 oC
Figure 3: Typical Output Characteristics at 175 oC
Figure 4: Typical Drain Source On-resistance
Figure 5: Typical Blocking Characteristics
January 2011
Figure 6: Typical Gate Source I-V Characteristics
Preliminary Datasheet
http://www.genesicsemi.com
Page 2 of 3


Part Number A-GA10JT12
Description Super Junction Transistor
Maker GeneSiC
Total Page 3 Pages
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