LL103A THRU LL103C
Dimensions in inches and (millimeters)
♦ For general purpose applications.
♦ The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is pro-
tected by a PN junction guard ring.
♦ The low forward voltage drop and fast switch-
ing make it ideal for protection of MOS devices,
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click suppression, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
♦ This diode is also available in DO-35 case with
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103AW, SD103BW, SD103CW.
Case: MiniMELF Glass Case SOD-80C
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Peak Inverse Voltage
Power Dissipation (Infinite Heatsink)
TC = 3/8″ from Body
derates at 4 mW/°C to 0 at 125 °C
Storage Temperature Range
Single Cycle Surge
60-Hz Sine Wave
1) Valid provided that electrodes are kept at ambient temperature.
–55 to +150