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General Semiconductor
General Semiconductor

LL43 Datasheet Preview

LL43 Datasheet

Schottky Diodes

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LL43 pdf
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
LL42, LL43
Schottky Diodes
FEATURES
For general purpose applications.
These diodes feature very low turn-
on voltage and fast switching. These
devices are protected by a PN junction
guard ring against excessive voltage, such
as electrostatic discharges.
These diodes are also available in the DO-35 case
with type designations BAT42 to BAT43 and in the
SOD-123 case with type designations
BAT42W to BAT43W.
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Repetitive Peak Forward Current
at tp < 1 s, δ < 0.5, Tamb = 25 °C
VRRM
IF
IFRM
Surge Forward Current
at tp < 10 ms, Tamb = 25 °C
Power Dissipation at Tamb = 65 °C
IFSM
Ptot
Junction Temperature
Tj
Ambient Operating Temperature Range
Tamb
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
30
2001)
5001)
41)
2001)
125
–55 to +125
–65 to +150
Unit
V
mA
mA
A
mW
°C
°C
°C
4/98



General Semiconductor
General Semiconductor

LL43 Datasheet Preview

LL43 Datasheet

Schottky Diodes

No Preview Available !

LL43 pdf
LL42, LL43
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Reverse Breakdown Voltage
tested with 100 µA Pulses
V(BR)R
30
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 200 mA
at IF = 10 mA
at IF = 50 mA
at IF = 2 mA
at IF = 15mA
LL42
LL42
LL43
LL43
VF
VF
VF
VF
VF
0.26
Leakage Current
Pulse Test tp < 300 µs, δ < 2%
at VR = 25 V
at VR = 25 V, Tj = 100 °C
Capacitance
at VR = 1 V, f = 1 MHz
IR
IR
Ctot
Reverse Recovery Time
from IF = 10 mA through IR = 10 mA to IR = 1 mA,
RL = 100
trr
Rectification Efficiency
at RL = 15 K, CL = 300 pF,
f = 45 MHz, VRF = 2 V
ηv 80
Thermal Resistance Junction to Ambient Air
RthJA
1) Valid provided that electrodes are kept at ambient temperature.
Typ.
7
Max.
Unit
V
1V
0.4 V
0.65 V
0.33 V
0.45 V
0.5 µA
100 µA
– pF
5 ns
–%
0.31)
K/mW


Part Number LL43
Description Schottky Diodes
Maker General Semiconductor
Total Page 2 Pages
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