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General Semiconductor
General Semiconductor

SD103CWS Datasheet Preview

SD103CWS Datasheet

(SD103AWS - SD103CWS) SCHOTTKY DIODES

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SD103CWS pdf
NEW PRODUCT
NEW PRODUCT
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SD103AWS THRU SD103CWS
SCHOTTKY DIODES
SOD-323
.012 (0.3)
Cathode Mark
Top View
.059 (1.5)
.043 (1.1)
min. .010 (0.25)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing, and coupling diodes for
fast switching and low logic level applications. Other
applications are click suppression, efficient full wave
bridges in telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in Mini-MELF case with the
type designation LL103A … LL103C, DO-35 case with
the type designations SD103A .. SD103C and SOD-123
case with type designations SD103W ... SD103CW.
MECHANICAL DATA
Case: SOD-323 Plastic Package
Weight: approx. 0.004g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Peak Inverse Voltage
Power Dissipation at Tamb = 25°C
Single Cycle Surge
10 µs Square Wave
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
SD103AWS
SD103BWS
SD103CWS
SYMBOL
VRRM
VRRM
VRRM
Ptot
IFSM
Tj
TS
RΘJA
VALUE
40
30
20
1501)
2
1251)
– 55 to +1501)
650
NOTES
(1)Valid provided that electrodes are kept at ambient temperature
UNIT
Volts
Volts
Volts
mW
Amps
°C
°C
°C/W
11/30/98



General Semiconductor
General Semiconductor

SD103CWS Datasheet Preview

SD103CWS Datasheet

(SD103AWS - SD103CWS) SCHOTTKY DIODES

No Preview Available !

SD103CWS pdf
SD103AWS THRU SD103CWS
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
SD103AWS
SD103BWS
SD103CWS
Forward Voltage Drop
at IF = 20 mA
at IF = 200 mA
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 50 mA to 200 mA, recover to 0.1 IR
SYMBOL
IR
IR
IR
VF
VF
Ctot
trr
MIN.
TYP.
50
10
MAX.
5
5
5
0.37
0.6
UNIT
µA
µA
µA
V
V
pF
ns
RATINGS AND CHARACTERISTICS SD103AWS THRU SD103CAWS


Part Number SD103CWS
Description (SD103AWS - SD103CWS) SCHOTTKY DIODES
Maker General Semiconductor
Total Page 3 Pages
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