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HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS

CS540B8 Datasheet Preview

CS540B8 Datasheet

N-Channel MOSFET

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CS540B8 pdf
Huajing Discrete Devices
Silicon N-Channel Power MOSFET
R
CS540B8
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
PACKAGE
CS540B8
TO-220
BRAND
CS540B8
Pb
VDSS
100V
Lead Free Package and Finish
H F Halogen Free
RDS(on)(Max)
ID
48m
33A
D
G
D
S
TO-220 Not to Scale
G
S
Absolute Maximum Ratings Tc= 25unless otherwise specified
Symbol
Parameter
VDSS
Drain-to-Source Voltage
(NOTE *1)
ID
ID@ 100
Continuous Drain Current
Continuous Drain Current
Maximum
100
33
Figure 3
IDM Pulsed Drain Current, VGS@ 10V
Power Dissipation
PD Derading Factor above 25
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
L=1.3 mH, ID=20 Amps
IAS Pulsed Avalanche Rating
(NOTE *2)
110
128
0.86
±20
260
Figure 8
dv/dt
Peak Diode Recovery dv/dt
(NOTE *3)
3.0
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in(1.6mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
TJ and TSTG Operation Junction and Storage Temperature Range
-55 to 175
*Drain Current limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Units
V
A
W
W/
V
mJ
A
V/ns
Thermal Resistance
Symbol Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Maximum
1.17
62
Units
/W
/W
Test Condition
Water cooled heat sink, PD adjusted for a
peak junction temperature of +175.
1 cubic foot chamber, free air.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1/11 REV:2008-1



HUAJING MICROELECTRONICS
HUAJING MICROELECTRONICS

CS540B8 Datasheet Preview

CS540B8 Datasheet

N-Channel MOSFET

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CS540B8 pdf
Electrical CharacteristicsTJ= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Rating
Min. Typ. Max.
VDSS
Drain-to-Source Breakdown Voltage
100 --
--
ΔBVDSS/ΔTJ Bvdss Temperature Coefficient
-- 0.71 --
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS(F)
IGSS(R)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- +100
-- -- -100
Units Test Conditions
V
V/
uA
nA
VGS=0V, ID=250µA
Reference to 25,
ID=250uA
VDS = 100V, VGS= 0V,
Ta = 25
VDS =80V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
VGS(TH)
gfs
Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Min.
--
Rating
Typ. Max.
43 48
2.0 -- 4.0
-- 21 --
Units
m
V
S
Test Conditions
VGS=10V,ID=16A
(NOTE*4)
VDS = VGS, ID = 250µA
VDS=30V, ID =16A
(NOTE*4)
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)Charge
Min.
--
Rating
Typ. Max.
1614
--
-- 511 --
-- 204 --
-- 48 --
-- 7.2 --
-- 23 --
Units Test Conditions
VGS = 0V
pF
VDS = 25V
f = 1.0MHz
Figure 14
VDD =80V
nC
ID =16A
VGS = 10V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
--
Rating
Typ. Max.
13 --
-- 30 --
-- 50 --
-- 25 --
Units Test Conditions
VDD = 50V
ns
ID =16A
VGS = 10V
RG = 5.1
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1/11 REV:2008-1


Part Number CS540B8
Description N-Channel MOSFET
Maker HUAJING MICROELECTRONICS
Total Page 9 Pages
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