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HVV1012-250 Datasheet Preview

HVV1012-250 Datasheet

Power Transistor

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HVV1012-250 pdf
The innovative Semiconductor Company!
HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor
1025-1150 MHz, 10μs Pulse, 1% Duty Cycle
For Airborne DME, TCAS and IFF Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN EFFICIENCY IRL
(mA) (W) (dB)
(%) (dB)
Class AB
1150
50 100 250 19.5 48 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 10μs and pulse period = 1ms.
DESCRIPTION
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed
for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology
produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250
Demo Kit Part Number: HVV1012-250-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A
12/11/08
1



HVVi
HVVi

HVV1012-250 Datasheet Preview

HVV1012-250 Datasheet

Power Transistor

No Preview Available !

HVV1012-250 pdf
The innovative Semiconductor Company!
HL1F HL1F0-oV0-Bo2VrB2raV5AaV5n-A1n-1id11ri0d1r0b11Ab51oA52o0v2r0v-irn-2oiMn2oMe5ne5nH0iDH0ciDzcsHMz,sHM,P1iEP1giE0ug,0uhµl,hTµslTTMssVeCsVeCdPodAPoAulPSutlPlStaoslaoasgweagwen,eL1FHne,ed-o0,1eVBrd,1r2rH%aIVH%TA5IFnTiF-1irgdr1iDFra0gbDF1haA1nouh5Anuv2rAst0RinspytRi-opyMsie2upnsCtup5DClHotgicilogy0Mrzgcisyrcgc,aHecPEl1aedtelu,i0idtegTlnoiμsCnohenseAnedsPsVSsssuPsoalosnlwedt,ea1IrF%gTFreDaA,nupHstpiyislgitCcohayrtciRloeunsggedness
EEELLLEEECCCTTTRRRICCICAAALLLCCHCHAHARARARCAATCCETRTEIESRRTIISICSTSTICICSS
VVIIGIηVSDGRDBTGPSSy1RL1SSHS(m1D(SSQb)o)2l
Parameter
Drain-SourceBreakdown
DrainLeakageCurrent
GPIDGnoraapawttueeientrLQEReGufeafiatiekcuisnairecgnneencLyCtosuVsrorletangte
Threshold Voltage
VCGoSn=d0itVio,InDs=5mA 
Min
95
VGS=0V,VDS=48V
-
VVVFFF===DDG111DDS111===555555000V0VMMM,,VVHHH,IDIDzzzDS=Q=3=001V00μ0AmA
-
17.5
-
46
1.1
0.7
Typical Max
102
-
50
200
114-9.1478.55
1-5--.48
1.2 1.7
UniVt
μA
μdd%VVBBA





PPPUuULlLsSSeEECCHCHAHARARARCAATCCETRTEIESRRTIISICSTSTICICSS
SymbolParameter
Conditions
Min TypicalMax
Unit

TTrf11
PD1
RFaislleTTimimee 
PulseDroop
FF==11115500MMHHzz 
F=1150MHz
-
-



<40
<15
5500
-  0.25 0.5


nS
nS

 dB 
THERMAL PERFORMANCE
TTHhEerRmMaAlLCPHEARRFAOCTREMRAISNTICCES
 


 









RRRUUGGGGGGEEDEDNDNENESESSSPSEPRPEFERORFRFOMORARMNMCAAENNCCEE
  
  

 








The HVV1012-250 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR
a1pNtoOrianTtteEod:fAotluhltpepapurtuaplmsoeewwteeirrtsahnmpduenalsosemuwrieniddaltuhonp=dee1rar0tinusgelscve,oddltucaotgynecdayictcrilooesn=sst1ah%te2far5en0qdWuVeoDnucDtyp=bua5tn0pdVo,owIfDeoQrpme=rea1at0iso0unmr.eAdiantathbero1a0d%-
b2NaOn1Td.)Em:NAaOtmcThoEeu:dnAtteollsftpgfaaixtrteaumvroee.lttaegrse rmeqeuaisreudretodauttnadinenr opmulinsaeldqcuoienscdeintitocnusrraent t2.50W output power
1m.) eNaOsTuEre:dAallt pthaera1m0e%teprosimnteoafstuhreedpuulnsdeewr ipthulpsueldsecownidditthio=ns10aµts2e5c0,Wduotyutcpyuctlepo=w1e%r
maenadsVuDreDd =at5t0hVe, 1ID0Q% =po1i0n0tmoAf thineapburlsoeadwbiathndpumlsaetcwhieddthte=s1t 0fiµxstuerce,.duty cycle = 1%
a2n.d) VNDODTE=:5A0Vm,oIDuQnt=o1f00gmatAe ivnoaltbagroeadrebqaunidremdattcoheadttateinst nfioxmtuirnea.l quiescent current.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
HVVi Semiconductors, Inc.
H1V0V23i5SSem. 5ic1ostnSdtu. cStuoirtse, 1In0c0.
1P02h3o5enSix. ,5A1szt .S8t.5S0u4i4te 100
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified
Tel: (866) 42I9S-OHV90V0i1(:42808040)Coerrvtiifsiietdwww.hvvi.com
T©el2:0(08866H)V42V9i-SHeVmVicio(n4d8u8c4t)oorsr,vIinscit. wAwll wR.ihgvhvtsi.Rcoemserved.
EG-01-DS09A
12/11/08
2
EG-01-DS09A
EG-01-1D2S/1029/A08
12/12/082


Part Number HVV1012-250
Description Power Transistor
Maker HVVi
Total Page 5 Pages
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