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Harris Corporation
Harris Corporation

IRF511 Datasheet Preview

IRF511 Datasheet

(IRF510 - IRF513) N-Channel Power MOSFETs

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IRF511 pdf
Semiconductor
January 1998
www.DataSheet4U.com
IRF510, IRF511,
IRF512, IRF513
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,
N-Channel Power MOSFETs
Features
• 4.9A, and 5.6A, 80V and 100V
• rDS(ON) = 0.54and 0.74
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF510
TO-220AB
IRF510
IRF511
TO-220AB
IRF511
IRF512
TO-220AB
IRF512
IRF513
TO-220AB
IRF513
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17441.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1573.2



Harris Corporation
Harris Corporation

IRF511 Datasheet Preview

IRF511 Datasheet

(IRF510 - IRF513) N-Channel Power MOSFETs

No Preview Available !

IRF511 pdf
IRF510, IRF511, IRF512, IRF513
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF510
IRF511
IRF512
IRF513 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
100
80
100
80 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . VDGR
100
80
100
80 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
5.6
5.6
4.9
4.9 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
4
4 3.4 3.4 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
20
20
18
18 A
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20 V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD
43
43
43
43 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.29
0.29
0.29
0.29
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature Range. . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from 25ase for 10s . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg
19
-55 to 175
300
260
19
-55 to 175
300
260
19
-55 to 175
300
260
19
-55 to 175
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF510 IRF512
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
100 - - V
IRF511, IRF513
80 - - V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF510, IRF511
VGS(TH) VGS = VDS, ID = 250µA
2.0 - 4.0 V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 150oC
-
-
- 25 µA
- 250 µA
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
5.6 - - A
IRF512, IRF513
4.9 - - A
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2) rDS(ON)
IRF510, IRF511
VGS = ±20V
VGS = 10V, ID = 3.4A, (Figures 8, 9)
- - ±100 nA
- 0.4 0.54
IRF512, IRF513
- 0.5 0.74
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VGS = 50V, ID = 3.4A, (Figure 12)
1.3 2.0
-
td(ON)
tr
td(OFF)
ID 5.6A, RGS = 24, VDD = 50V, RL = 9
VDD = 50V, VGS = 10V, (Figures 17, 18)
MOSFET switching times are essentially
independent of operating temperature
- 8 11
- 25 36
- 15 21
tf - 12 21
Qg(TOT)
Qgs
VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is essentially independent of
operating temperature
-
-
5.0 7.7
2.0 -
Qgd - 3.0 -
S
ns
ns
ns
ns
nC
nC
nC
5-2


Part Number IRF511
Description (IRF510 - IRF513) N-Channel Power MOSFETs
Maker Harris Corporation
Total Page 7 Pages
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