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HWC34NC Datasheet Preview

HWC34NC Datasheet

C-Band Power FET Non-Via Hole Chip

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HWC34NC pdf
HWC34NC
C-Band Power FET Non-Via Hole Chip
Features
Low Cost GaAs Power FET
Class A or Class AB Operation
8.5 dB Typical Gain at 4 GHz
5V to 10V Operation
Description
The HWC34NC is a power GaAs FET designed
for various L-band & S-band applications.
Absolute Maximum Ratings
VDS
VGS
ID
IG
TCH
TSTG
PT*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink
+15V
-5V
IDSS
6mA
175°C
-65 to +175°C
12W
Autumn 2002 V1
Outline Dimensions
1525.0
1392.5
9
1235.0
1077.5
1
10
5
920.0
762.5
2
11
6
605.0
3
7
447.5
12
290.0
132.5
0.0
4
13
8
0.0
75.5
444.5
524.0
Units: µm
Thickness: 100 ±5
Chip size ±50
Bond Pads 1-4 (Gate):
Bond Pads 5-8 (Drain):
Bond Pads 9-13(Source):
100 x 100
100 x 100
100 x 100
Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS Saturated Current at VDS=3V, VGS=0V
mA
900
1200
1600
VP Pinch-off Voltage at VDS=3V, ID=60mA
V -3.5 -2.0 -1.5
gm
P1dB
G1dB
PAE
Transconductance at VDS=3V, ID=600mA
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
mS
dBm
dB
%
-
32
6.5
25
700
33
7.5
30
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.



Hexawave
Hexawave

HWC34NC Datasheet Preview

HWC34NC Datasheet

C-Band Power FET Non-Via Hole Chip

No Preview Available !

HWC34NC pdf
HWC34NC
C-Band Power FET Non-Via Hole Chip
March 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz)
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
lS11l
0.741
0.740
0.743
0.739
0.739
0.736
0.733
0.732
0.73
0.730
0.729
0.720
0.716
0.704
0.692
0.673
0.649
ANG
-162.95
-167.73
-171.28
-173.74
-176.23
-178.33
179.79
178.19
176.65
175.59
174.46
172.75
170.43
168.33
165.78
163.35
160.96
lS21l
3.027
2.432
2.025
1.731
1.511
1.343
1.206
1.101
1.014
0.943
0.884
0.832
0.788
0.757
0.728
0.712
0.700
ANG
78.58
72.17
66.45
61.37
56.74
52.59
48.98
45.57
42.26
39.40
36.76
34.64
33.00
31.55
29.73
28.60
27.33
lS12l
0.051
0.063
0.074
0.088
0.101
0.116
0.131
0.148
0.167
0.186
0.208
0.231
0.257
0.285
0.318
0.355
0.397
ANG
75.38
77.31
78.97
80.17
80.68
80.95
81.81
81.84
81.32
81.33
80.28
79.21
78.26
76.82
75.03
72.46
70.08
lS22l
0.343
0.368
0.392
0.420
0.449
0.478
0.506
0.524
0.540
0.556
0.564
0.578
0.591
0.602
0.600
0.593
0.589
ANG
-149.69
-147.33
-145.34
-144.05
-142.95
-142.34
-142.38
-142.79
-144.48
-145.20
-146.77
-147.87
-148.61
-149.79
-151.32
-154.11
-156.34
Bonding Manner
Gate, drain pad: 1 wire on each pad
Source pad: 1 wires on each pad
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.


Part Number HWC34NC
Description C-Band Power FET Non-Via Hole Chip
Maker Hexawave
Total Page 2 Pages
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