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Hitachi Power Semiconductor Device Electronic Components Datasheet

U17 Datasheet

Controlled Avalanche Diode

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U17 pdf
wwwC.DONaTtaRSOLhLeEeDt4AUVA.cLoANmCHE DIODE
U17
FEATURES
Transient surge voltage protection.
Diffused-junction. Glass passivated and
encapsulated.
OUTLINE DRAWING
Direction of polarity
Unit in mm(inch)
φ 1.2
(0.05)
Type
U17B(100V)
U17C(200V)
U17D(300V)
U17E(400V)
Color of
cathode band
Yellow
Black
Purple
Blue
Weight: 1.0 (g)
ABSOLUTE MAXIMUM RATINGS
Items
Type
U17B
U17C
U17D
U17E
Repetitive Peak Reverse Voltage
Peak Reverse Power
VRRM
PRM
V
kW
100 200 300 400
3( Tj = 25°C,Impulse duration 10µs Non-repetitive )
Average Forward Current
IF(AV)
A
( )Single-phase half sine wave 180° conduction
2.5 TL=90°C, Lead length = 10mm
Surge(Non-Repetitive) Forward Current
I2t Limit Value
IFSM
I2t
A
A2s
100( Without PIV, 10ms conduction, Tj = 175°C start )
40( Time = 2 ~ 10ms, I = RMS value )
Operating Junction Temperature
Storage Temperature
Tj °C
Tstg °C
-40 ~ +175
-40 ~ +175
Notes (1) Lead mounting : Lead temperature 300°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 3kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Items
Symbols Units
Peak Reverse Current
IRRM
µA
Peak Forward Voltage
Reverse Recovery Time
Avalanche Voltage
Avalanche Voltage Temperature
Coefficient
Steady State Thermal Impedance
VFM
trr
VAVL
α
Rth(j-a)
Rth(j-l)
V
µs
V
%/°C
°C/W
Min.
-
Typ.
4
1.5
0.6
Max.
50
20
10
Test Conditions
B class
C,D class
E class
Rated VRRM
-
-
1.1
IFM=2.5Ap, Single-phase half sine
wave 1 cycle
- 3.0 -
Table.1
IF=2mA, VR=-15V
IRM=1.0mA, Single-phase half sine
wave 1 pps, Time 5s
-
0.080
-
VAVL
VAVL
×
1
175-25
×100
60
--
Lead length = 10 mm
30
PDE-U17-0


Hitachi Power Semiconductor Device Electronic Components Datasheet

U17 Datasheet

Controlled Avalanche Diode

No Preview Available !

U17 pdf
U17www.DataSheet4U.com
TABLE.1
U17
VRRM Class
VAVL Symbols
B C DE
Units
27 30 33 36 33 36 39 44 44 50 55 63 55 63 70
TYP. VAVL
270 300 330 360 330 360 390 440 440 500 550 630 550 630 700 V
A MIN 230 255 280 305 280 305 330 375 375 425 465 535 465 535 595
VAVL ±15% MAX 310 345 380 415 380 415 450 505 505 575 635 725 635 725 805
Band B MIN 250 280 305 330 305 330 360 405 405 460 505 580 505 580 645
V
±7.5% MAX 290 320 355 390 355 390 420 475 475 535 590 680 590 680 750
As required, the avalanche voltage can be selected as follows :
“example” U17C36A
VRRM
IF(AV)
VAVL
200V
2.5A
305~415V
Forward characteristics
100
Single-phase half sine wave
Conduction : 10ms 1 Cycle
10
TL=175˚C
TL=25˚C
1
0.1 1 2 3
PEAK FORWARD VOLTAGE DROP (V)
Max. allowable ambient temperature
(Resistive or inductive load)
180
Single-phase half sine wave
180˚ conduction (50Hz)
160
140 L L
120
PC board (100x180x1.6t)
Copper foil ( 5.5)
100
80
60
Lead length
40 L=10mm
20mm
25mm
20
0 0 0.5 1.0 1.5 2.0 2.5 3.0
AVERAGE FORWARD CURRENT (A)
Max. average forward power dissipation
(Resistive or inductive load)
4.5
4.0
DC
3.5
Single-phase
3.0 ( 50Hz )
2.5
2.0
1.5
1.0
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
AVERAGE FORWARD CURRENT (A)
Max. allowable lead temperature
(Resistive or inductive load)
180
160
Single-phase half sine wave
180˚ conduction (50Hz)
140
Lead length
L=10mm
120 20mm
25mm
100
80
60 L L
40
Lead temp PC board
20 (100x180x1.6t)
Copper foil ( 5.5)
0 0 0.5 1.0 1.5 2.0 2.5
AVERAGE FORWARD CURRENT (A)
3.0
PDE-U17-0


Part Number U17
Description Controlled Avalanche Diode
Maker Hitachi
Total Page 4 Pages
PDF Download
U17 pdf
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