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Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS119 Datasheet

Silicon Epitaxial Planar Diode for High Speed Switching

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1SS119 pdf
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
Features
Low capacitance. (C = 3.0pF max)
Short reverse recovery time. (trr = 3.5ns max)
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
1SS119
Cathode band
Light Blue
Package Code
MHD
ADE-208-180A (Z)
Rev. 1
Aug. 1995
Outline
12
Cathode band
1. Cathode
2. Anode


Hitachi Power Semiconductor Device Electronic Components Datasheet

1SS119 Datasheet

Silicon Epitaxial Planar Diode for High Speed Switching

No Preview Available !

1SS119 pdf
1SS119
Absolute Maximum Ratings (Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
Junction temperature
Storage temperature
Note: Within 1s forward surge current.
Symbol
VRM
VR
I FM
I FSM *
IO
Pd
Tj
Tstg
Value
35
30
450
1
150
250
175
–65 to +175
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Forward voltage
Reverse current
Capacitance
VF
IR
C—
Reverse recovery time trr*
Note: Reverse recovery time test circuit
DC
Supply
Ro = 50Pulse
Generator
Typ Max
— 0.8
— 0.1
— 3.0
— 3.5
0.1µF
3k
Trigger
Unit
V
µA
pF
ns
Test Condition
IF = 10mA
VR = 30V
VR = 1V, f = 1MHz
IF = 10mA, VR = 6V, RL = 50
Sampling
Oscilloscope
Rin = 50
2


Part Number 1SS119
Description Silicon Epitaxial Planar Diode for High Speed Switching
Maker Hitachi Semiconductor
Total Page 6 Pages
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