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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4501 Datasheet

Silicon NPN Epitaxial

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2SC4501 pdf
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2SC4501(L)/(S)
Silicon NPN Epitaxial
Application
High gain amplifier and medium speed switching
Outline
DPAK
4
1
2
3
S Type
4
12 3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
1
2, 4
3


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4501 Datasheet

Silicon NPN Epitaxial

No Preview Available !

2SC4501 pdf
2SC4501(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC*1
Tj
Tstg
Ratings
30
30
7
3
4
10
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
30
Collector to emitter breakdown V(BR)CEO
voltage
30
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICEO
hFE
VCE (sat)
2000
Base to emitter saturation
voltage
VCE (sat)
VBE (sat)
Turn on time
Turn off time
Storage time
Note: 1. Pulse test.
VBE (sat)
ton
toff
tstg
Typ
0.4
1.2
0.8
Max
Unit
V
Test conditions
IC = 0.1 mA, IE = 0
—V
IC = 1 mA, RBE = _
—V
IE = 0.1 mA, IC = 0
20 µA
50000
1.5 V
VCB = 24 V, RBE = _
VCE = 3 V, IC = 1.5 A*1
IC = 1.5 A, IB = 3 mA*1
2.0
2.0 V
IC = 3 A, IB = 30 mA*1
IC = 1.5 A, IB = 3 mA*1
3.5
— µs
— µs
— µs
IC = 3 A, IB = 30 mA*1
IC = 1.5 A,
IB1 = –IB2 = 3 mA,
VCC = 30 V
2


Part Number 2SC4501
Description Silicon NPN Epitaxial
Maker Hitachi Semiconductor
Total Page 5 Pages
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