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Hitachi Power Semiconductor Device Electronic Components Datasheet

D1376 Datasheet

2SD1376

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D1376 pdf
2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
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Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
6 k
(Typ)
0.5 k
(Typ)
1
ID


Hitachi Power Semiconductor Device Electronic Components Datasheet

D1376 Datasheet

2SD1376

No Preview Available !

D1376 pdf
2SD1376(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
www.DataCSthoeeEt4dUio.cdoemforward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC * 1
Tj
Tstg
ID*1
Rating
120
120
7
1.5
3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
I CBO
I CEO
hFE
VCE (sat)1
VCE (sat)2
VBE (sat)1
VBE (sat)2
VD
Ton
2000
Turn off time
Toff —
Note: 1. Pulse test.
Typ
0.5
2.0
Max Unit
—V
—V
100 µA
10 µA
30000
1.5 V
2.0 V
2.0 V
2.5 V
3.0 V
µs
µs
Test conditions
IC = 10 mA, RBE =
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
IC = 1 A, IB1 = –IB2 = 1 mA
2


Part Number D1376
Description 2SD1376
Maker Hitachi Semiconductor
Total Page 6 Pages
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