http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT1021R Datasheet

Silicon P Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT1021R pdf
HAT1021R
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
ADE-208-475 D (Z)
5th. Edition
February 1999
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain


Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT1021R Datasheet

Silicon P Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT1021R pdf
HAT1021R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body–drain diode reverse drain current IDR
Channel dissipation
Pch Note2
– 20
± 10
– 5.5
– 44
– 5.5
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Note: 1. PW 10µs, duty cycle 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
– 20
± 10
– 0.5
6
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 3. Pulse test
Typ
0.048
0.065
9.5
1200
630
200
20
120
175
140
– 0.9
65
Max
± 10
– 10
– 1.5
0.060
0.085
– 1.4
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = – 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 8 V, VDS = 0
VDS = – 20 V, VGS = 0
VDS = –10 V, I D = – 1 mA
ID = – 3 A, VGS = – 4 V Note3
ID = – 3 A, VGS = – 2.5 V Note3
ID = – 3 A, VDS = – 10 V Note3
VDS = – 10 V
VGS = 0
f = 1MHz
VGS = – 4 V, ID = – 3 A
VDD – 10 V
IF = – 5.5 A, VGS = 0 Note3
IF = – 5.5 A, VGS = 0
diF/ dt = 20 A/µs
2


Part Number HAT1021R
Description Silicon P Channel Power MOS FET High Speed Power Switching
Maker Hitachi Semiconductor
Total Page 9 Pages
PDF Download
HAT1021R pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 HAT1021 Silicon P Channel Power MOS FET High Speed Power Switching Hitachi Semiconductor
Hitachi Semiconductor
HAT1021 pdf
2 HAT1021R Silicon P Channel Power MOS FET High Speed Power Switching Hitachi Semiconductor
Hitachi Semiconductor
HAT1021R pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components