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Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2033R Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

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HAT2033R pdf
HAT2033R/HAT2033RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
SOP–8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
ADE-208-664B (Z)
3rd. Edition
February 1999


Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT2033R Datasheet

Silicon N Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT2033R pdf
HAT2033R/HAT2033RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT2033R
HAT2033RJ
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note4
AP
60
± 20
7
56
7
7
Avalanche energy
HAT2033R
HAT2033RJ
E Note4
AR
4.2
Channel dissipation
Pch Note2
2.5
Channel temperature
Tch 150
Storage temperature
Tstg – 55 to + 150
Note:
1. PW 10µs, duty cycle 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
3. Value at Tch=25°C, Rg50
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2


Part Number HAT2033R
Description Silicon N Channel Power MOS FET High Speed Power Switching
Maker Hitachi Semiconductor
Total Page 10 Pages
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