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Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT3008RJ Datasheet

Silicon N/P Channel Power MOS FET High Speed Power Switching

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HAT3008RJ pdf
HAT3008R/HAT3008RJ
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
ADE-208-536B (Z)
3rd. Edition
February 1999
SOP–8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
Nch
S3
Pch
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain


Hitachi Power Semiconductor Device Electronic Components Datasheet

HAT3008RJ Datasheet

Silicon N/P Channel Power MOS FET High Speed Power Switching

No Preview Available !

HAT3008RJ pdf
HAT3008R/HAT3008RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode
reverse drain current
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
60 – 60 V
±20 ± 20 V
5
– 3.5
A
40 – 28 A
5
– 3.5
A
Avalanche current
HAT3008R
I Note4
AP
HAT3008RJ
—— —
5
– 3.5
A
Avalanche energy
HAT3008R
E Note4
AR
HAT3008RJ
—— —
2.14 1.05 mJ
Channel dissipation
Pch Note2 2 2 W
Channel dissipation
Pch Note3 3 3 W
Channel temperature
Tch 150 150 °C
Storage temperature
Tstg – 55 to + 150 –55 to + 150 °C
Note:
1. PW 10µs, duty cycle 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW10s
4. Value at Tch=25°C, Rg50
2


Part Number HAT3008RJ
Description Silicon N/P Channel Power MOS FET High Speed Power Switching
Maker Hitachi Semiconductor
Total Page 15 Pages
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