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Hittite Microwave Corporation
Hittite Microwave Corporation

HMC784MS8GE Datasheet Preview

HMC784MS8GE Datasheet

GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz

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HMC784MS8GE pdf
v00.0808
HMC784MS8GE
www.DataSheet4U.com
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Functional Diagram
11
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm2
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
11 - 224
Electrical Specifications,
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.6
0.8
0.9
1.3
Isolation
DC - 4.0 GHz
26
30
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
35
30
20
10
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
37
38
Input Power for 1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
35
38
35
38
41
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
42
62
61
60
Switching Characteristics
tRISE, tFALL (10/90% RF) DC - 4.0 GHz
tON, tOFF (50% CTL to 10/90% RF)
15
40
Max.
0.6
0.8
1.1
1.3
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



Hittite Microwave Corporation
Hittite Microwave Corporation

HMC784MS8GE Datasheet Preview

HMC784MS8GE Datasheet

GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz

No Preview Available !

HMC784MS8GE pdf
v00.0808
Insertion Loss vs. Temperature
0
-1
+25 C
-2 +85 C
-40 C
-3
-4
-5
012345
FREQUENCY (GHz)
6
Insertion Loss vs. Vdd
0
-1
-2
+3V
-3 +5V
+8V
-4
-5
0123456
FREQUENCY (GHz)
Return Loss
0
-10
-20
-30
-40
-50
-60
0
1
INPUT RETURN LOSS
OUTPUT RETURN LOSS
234
FREQUENCY (GHz)
5
6
HMC784MS8GE
www.DataSheet4U.com
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Isolation
0
-10
-20
-30
-40
-50
0
1
RF1
RF2
234
FREQUENCY (GHz)
5
6
Isolation vs. Vdd
0
-10
-20
+3V
+5V
+8V
-30
-40
-50
01234
FREQUENCY (GHz)
5
6
11
RF1 to RF2 Isolation
0
-10 RF1 ON RF2 OFF
RF1 OFF RF2 ON
-20
-30
-40
-50
012345
FREQUENCY (GHz)
6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 225


Part Number HMC784MS8GE
Description GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz
Maker Hittite Microwave Corporation
Total Page 8 Pages
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HMC784MS8GE pdf
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