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Hittite Microwave Corporation
Hittite Microwave Corporation

HMC816LP4E Datasheet Preview

HMC816LP4E Datasheet

Dual Channel Low Noise Amplifier

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HMC816LP4E pdf
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v00.1108
8
Typical Applications
The HMC816LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Multi-Channel Applications
Functional Diagram
HMC816LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Features
Low Noise Figure: 0.5 dB
High Gain: 22 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm2
General Description
The HMC816LP4E is a GaAs PHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817-
LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
8 - 362
Electrical Specifications, TA = +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Parameter
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
Frequency Range
230 - 450
450 - 660
Gain
17 21
14 17
Gain Variation Over Temperature
0.001
0.002
Noise Figure
0.5 0.9
0.5 0.9
Input Return Loss
13 17
Output Return Loss
12 10
Output Power for 1 dB
Compression (P1dB)
10 14
13 16
Saturated Output Power (Psat)
10 15
14 16.5
Output Third Order Intercept (IP3)
26
28
Supply Current (Idd)
24 34 44 24 34 44
* Rbias sets current, see application circuit herein
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
230 - 450
450 - 660
19 22
15 19
0.005
0.007
0.5 0.9
0.5 0.9
15 16
13 10
Units
MHz
dB
dB/ °C
dB
dB
dB
15 19
18 21
dBm
16 20
18 21
dBm
34 37 dBm
68 97 126 68 97 126 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com



Hittite Microwave Corporation
Hittite Microwave Corporation

HMC816LP4E Datasheet Preview

HMC816LP4E Datasheet

Dual Channel Low Noise Amplifier

No Preview Available !

HMC816LP4E pdf
www.DataSheet4U.com
v00.1108
HMC816LP4E
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Broadband Gain & Return Loss
25
20
15
10
5
0
-5
-10
-15
-20
-25
0.2
Vdd= 5V
Vdd= 3V
S21
S22
S11
0.4 0.6 0.8
1
FREQUENCY (GHz)
1.2
1.4
Gain vs. Temperature [1]
24
22
20
18
+25C
16 +85C
- 40C
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
8
Gain vs. Temperature [2]
24
22
20
18
+25C
16 +85C
- 40C
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
+25C
-5 +85C
- 40C
-10
-15
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Output Return Loss vs. Temperature [1]
0
+25C
-5 +85C
- 40C
-10
-15
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10 +25C
+85C
-15 - 40C
-20
-25
-30
-35
-40
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 363


Part Number HMC816LP4E
Description Dual Channel Low Noise Amplifier
Maker Hittite Microwave Corporation
Total Page 8 Pages
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