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Huandong
Huandong

2SA908 Datasheet Preview

2SA908 Datasheet

(2SA907 - 2SA909) Silicon PNP Power Transistors

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2SA908 pdf
Huandong Electronics
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SA907/908/909
DESCRIPTION
With TO-3 package
Complement to type 2SC1584/1585/1586
APPLICATIONS
For power switching and general purpose
applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2SA907
VCBO
Collector-base voltage
2SA908 Open emitter
2SA909
2SA907
VCEO
Collector-emitter voltage 2SA908 Open base
2SA909
VEBO
Emitter-base voltage
Open collector
IC Collector current
IB Base current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-100
-150
-200
-100
-150
-200
-6
-15
-5
150
150
-65~150
UNIT
V
V
V
A
A
W



Huandong
Huandong

2SA908 Datasheet Preview

2SA908 Datasheet

(2SA907 - 2SA909) Silicon PNP Power Transistors

No Preview Available !

2SA908 pdf
Huandong Electronics
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA907
2SA908 IC=-50mA ;IB=0
2SA909
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
2SA907 VCB=-100V; IE=0
ICBO Collector cut-off current 2SA908 VCB=-150V; IE=0
2SA909 VCB=-200V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
VEB=-6V; IC=0
IC=-5A ; VCE=-4V
IC=-0.5A ; VCE=-12V
Product Specification
2SA907/908/909
MIN TYP. MAX UNIT
-100
-150 V
-200
-3.0 V
-1.0 mA
-1.0 mA
30
10 MHz
2


Part Number 2SA908
Description (2SA907 - 2SA909) Silicon PNP Power Transistors
Maker Huandong
Total Page 3 Pages
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2SA908 pdf
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