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2N5495 Datasheet Preview

2N5495 Datasheet

Silicon NPN Power Transistor

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2N5495 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5495
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 3A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
VCEV
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
60
60
50
40
VEBO
Emitter-Base Voltage
5
IC Collector Current-Continuous
7
IB Base Current
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
3
1.8
50
150
Tstg Storage Temperature Range
-65~150
UNIT
V
V
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 /W
70 /W
isc websitewww.iscsemi.cn
1



INCHANGE
INCHANGE

2N5495 Datasheet Preview

2N5495 Datasheet

Silicon NPN Power Transistor

No Preview Available !

2N5495 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5495
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
ICEV Collector Cutoff Current
ICER Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 3A ; VCE= 4V
VCE= 55V; VBE= -1.5V
VCE= 55V; VBE= -1.5V;TC= 125
VCE= 40V; RBE= 100Ω
VCE= 40V; RBE= 100Ω; TC= 125
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 3A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V
Switching Times
ton Turn-On Time
toff Turn-Off Time
IC= 3A; IB1= -IB2= 0.3A
MIN MAX UNIT
40 V
50 V
60 V
1.0 V
1.5 V
1.0
5.0
mA
0.5
3.5
mA
1.0 mA
20 100
0.8 MHz
5 μs
15 μs
isc websitewww.iscsemi.cn
2


Part Number 2N5495
Description Silicon NPN Power Transistor
Maker INCHANGE
Total Page 2 Pages
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