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2SB989 Datasheet Preview

2SB989 Datasheet

Silicon PNP Power Transistor

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2SB989 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 30W@ TC= 25
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
·Complement to Type 2SD1352
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
-0.4 A
30 W
150
-55~150
isc websitewww.iscsemi.cn
1



INCHANGE
INCHANGE

2SB989 Datasheet Preview

2SB989 Datasheet

Silicon PNP Power Transistor

No Preview Available !

2SB989 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO Collector Cutoff Current
VCB= -80V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB Output Capacitance
fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V; ftest= 1MHz
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-80 V
-1.7 V
-1.5 V
-30 μA
-100 μA
40 240
15
90 pF
8 MHz
hFE-1 Classifications
ROY
40-80 70-140 120-240
isc websitewww.iscsemi.cn
2


Part Number 2SB989
Description Silicon PNP Power Transistor
Maker INCHANGE
Total Page 2 Pages
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