| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency power amplifier amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage... |
| Features |
ETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
80
110
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA; IE= 0
80
110
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
...
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| Datasheet |
 2SD2091 Datasheet - 185.83KB |
