| Description | isc N-Channel MOSFET Transistor IRF3315，IIRF3315 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤70mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Combine with the fast switching speed and ruggedized device design ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤70mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Combine with the fast switching speed and ruggedized device design ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drai... |
| Datasheet |
 IRF3315 Datasheet - 240.93KB |
