Description | isc N-Channel MOSFET Transistor IXTP90N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VD... |
Datasheet | IXTP90N075T2 Datasheet - 246.94KB |