| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12E60W，ITK12E60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600... |
| Datasheet |
 TK12E60W Datasheet - 241.63KB |
