| Description | isc N-Channel MOSFET Transistor TK14G65W FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.25Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Vol... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.25Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Volta... |
| Datasheet |
 TK14G65W Datasheet - 232.76KB |
