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FSA07N60A Datasheet Preview

FSA07N60A Datasheet

N-Channel MOSFET

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FSA07N60A pdf
FSA07N60A
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• ESD improved Capability
Ordering Information
PART NUMBER
FSA07N60A
PACKAGE
TO-220F
BRAND
FSA07N60A
Pb Lead Free Package and Finish
VDSS
600 V
RDS(ON) (Max.)
1.25 :
ID
7.0 A
G
DS
TO-220F
Packages
Not to Scale
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=12.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
VESD(G-S) Gate to Source ESD(HBM-C=100pF,R=1.5K:
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FSA07N60A
600
7.0*
Figure 3
Figure 6
30
0.24
± 30
720
Figure 8
5.0
3000
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
A
V/ ns
V
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
FSA07N60A
4.17
62
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2010 InPower Semiconductor Co., Ltd.
Page 1 of 9
FSA07N60A REV.B. Dec. 2010



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FSA07N60A Datasheet

N-Channel MOSFET

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FSA07N60A pdf
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
'BVDSS/' TJ Coefficient, Figure 11.
600 --
-- 0.61
Max.
--
--
-- -- 10
IDSS Drain-to-Source Leakage Current
-- -- 100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 1.0
-- -- -1.0
Units
V
V/ oC
μA
uA
Test Conditions
VGS=0V, ID=250μA
Reference to 25 oC,
ID=250 μA
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TJ=125 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
1.1
--
gfs Forward Transconductance
-- 6.0
Max.
1.25
4.0
--
Units
:
V
S
Test Conditions
VGS=10V, ID=3.5A
(NOTE *4)
VDS=VGS, ID=250PA
VDS=15V, ID=3.5A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
1100
110
13
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 28 --
-- 5.5 --
-- 11.5 --
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=300V
ID=7A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 13 --
-- 10 --
-- 28 --
-- 8 --
ns
VDD=300V
ID=7A
VGS=10 V
RG=4.7 :
©2010 InPower Semiconductor Co., Ltd.
Page 2 of 9
FSA07N60A REV.B. Dec. 2010


Part Number FSA07N60A
Description N-Channel MOSFET
Maker IPS
Total Page 9 Pages
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