http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf





IXYS
IXYS

80N60B Datasheet Preview

80N60B Datasheet

High Current IGBT

No Preview Available !

80N60B pdf
High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B
IXSX 80N60B
VCES =
IC25 =
=VCE(sat)
600 V
160 A
2.5 V
Symbol
V
CES
VCGR
V
CES
VGEM
I
C25
IC90
I
L(RMS)
ICM
SSOA
(RBSOA)
tsc
SCSOA
PC
TJ
TJM
Tstg
TL
Md
Weight
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
600 V
600 V
±20 V
±30 V
T
C
=
25°C
TC = 90°C
T
C
=
90°C
TC = 25°C, 1 ms
(silicon chip capability)
(silicon chip capability)
(silicon chip capability)
VGE = 15 V, TVJ = 125°C, RG = 5
Clamped inductive load
VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C
R
G
=
5
Ω,
non-repetitive
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
160
80
75
300
ICM = 160
@ 0.8 V
CES
10
A
A
A
A
A
µs
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6g
10 g
PLUS 247TM
(IXSX)
G
C
E
TO-264 AA
(IXSK)
(TAB)
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
Features
! International standard packages
! Very high current, fast switching IGBT
! Low V
CE(sat)
- for minimum on-state conduction
losses
! MOS Gate turn-on
- drive simplicity
Test Conditions
IC = 500 µA, VGE = 0 V
IC = 8 mA, VCE = VGE
VCE = VCES
V =0V
GE
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
4 8V
TJ = 25°C
T
J
=
125°C
200 µA
2 mA
±200 nA
2.5 V
Applications
! AC motor speed control
! DC servo and robot drives
! DC choppers
! Uninterruptible power supplies (UPS)
! Switch-mode and resonant-mode
power supplies
Advantages
! PLUS 247TM package for clip or spring
mounting
! Space savings
! High power density
© 2002 IXYS All rights reserved
98721B (07/02)



IXYS
IXYS

80N60B Datasheet Preview

80N60B Datasheet

High Current IGBT

No Preview Available !

80N60B pdf
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
t
fi
E
off
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 60 A; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I = I , V = 15 V
C C90 GE
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ =125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times
may increase for
V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
52 S
6600
660
196
240
85
90
60
45
140
180
4.2
pF
pF
pF
nC
nC
nC
ns
ns
280 ns
280 ns
7.0 mJ
60 ns
60 ns
4.8 mJ
190 ns
260 ns
6.7 mJ
0.26 K/W
0.15
K/W
IXSK 80N60B
IXSX 80N60B
PLUS 247TM Outline
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.00
20.32
2.29
0.25
0.25
20.83
2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number 80N60B
Description High Current IGBT
Maker IXYS
Total Page 2 Pages
PDF Download
80N60B pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 80N60 N-Channel Enhancement Mode Field Effect Transistor Cmos
Cmos
80N60 pdf
2 80N60A IZGK80N60A IXYS Corporation
IXYS Corporation
80N60A pdf
3 80N60B High Current IGBT IXYS
IXYS
80N60B pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components