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G1000QC250 Datasheet Preview

G1000QC250 Datasheet

Anode Shorted Gate Turn-Off Thyristor

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G1000QC250 pdf
WESTCODE
An IXYS Company
Date:- 2 Aug, 2011
Data Sheet Issue:- A1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G1000QC250
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2500
2500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=1250V, VDM2500V diGQ/dt=30A/µs, ITGQ=1000A and CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) For di/dt>300A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
300
615
1220
8
14
320×103
300
185
7
100
18
80
20
-40 to +125
-40 to +125
UNITS
A
nH
A
A
kA
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Provisional Data Sheet. Type G1000QC250 Issue A1
Page 1 of 4
August, 2011



IXYS
IXYS

G1000QC250 Datasheet Preview

G1000QC250 Datasheet

Anode Shorted Gate Turn-Off Thyristor

No Preview Available !

G1000QC250 pdf
WESTCODE An IXYS Company
Characteristics
Anode Shorted Gate Turn-Off Thyristor type G1000QC250
VTM
IL
IH
dv/dtcr
IDRM
IRRM
IGKM
Parameter
Maximum peak on-state voltage
Latching current
Holding current.
Critical rate of rise of off-state voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
Eon Turn-on Energy
tf Fall time
ts Storage time
tgq Turn-off time
IGQ Peak turn-off gate current
QGQ Turn-off gate charge
ttail Tail time
Eoff Turn-off energy
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
-
TYP
2.1
10
10
-
-
-
-
1.0
0.8
0.6
1.6
0.7
0.2
0.8
2.8
-
MAX TEST CONDITIONS (note 1)
2.5 IG=2A, IT=1000A
- Tj=25°C
- Tj=25°C
- VD=1250V, VGR=-2V
30 Rated VDRM, VGR=-2V
20 VRR=16V
20 VGR=-16V
- Tj=-40°C
- Tj=25°C
VD=25V, RL=25m
- Tj=125°C
3.5 Tj=-40°C
1.5 Tj=25°C
VD=25V, RL=25m
0.4 Tj=125°C
-
4
VD=1250V, ITGQ=1000A, diT/dt=300A/µs, IGM=30A,
diG/dt=30A/µs, CS=1µF, Rs=5
1
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
J
1.2 -
µs
- 13
µs
- 15
µs
300
-
VD=1250V, ITGQ=1000A, diGQ/dt=30A/µs, VGR=-16V,
CS=1µF
A
2-
mC
15 -
µs
- 2.2
J
- 0.038 Double side cooled
K/W
- 0.061 Cathode side cooled
K/W
- 0.101 Anode side cooled
K/W
- 17 (see note 2)
kN
325 -
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
Provisional Data Sheet. Type G1000QC250 Issue A1
Page 2 of 4
August, 2011


Part Number G1000QC250
Description Anode Shorted Gate Turn-Off Thyristor
Maker IXYS
Total Page 4 Pages
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