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IXYS
IXYS

IXFX64N50P Datasheet Preview

IXFX64N50P Datasheet

PolarHV HiPerFET Power MOSFET

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IXFX64N50P pdf
Advance Technical Information
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Preliminary Data Sheet
IXFK 64N50P
IXFX 64N50P
V
DSS
ID25
RDS(on)
trr
www.DataSheet4U.com
= 500 V
= 64 A
85 m
200 ns
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
I
DM
T
C
=
25°C,
pulse
width
limited
by
T
JM
I
AR
T
C
= 25°C
EAR TC = 25°C
EAS TC = 25°C
dv/dt
PD
TJ
TJM
Tstg
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
Md
Weight
Mounting torque (TO-264)
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
500 V
500 V
±30 V
±40 V
64 A
150 A
64 A
80 mJ
2.5 J
20 V/ns
830
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
500 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
85 m
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
PLUS247
(IXFX)
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International standard packages
z Fast recovery diode
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99348(05/05)



IXYS
IXYS

IXFX64N50P Datasheet Preview

IXFX64N50P Datasheet

PolarHV HiPerFET Power MOSFET

No Preview Available !

IXFX64N50P pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
30 50
S
8700
970
90
pF
pF
pF
30 ns
25 ns
85 ns
22 ns
150 nC
50 nC
50 nC
0.15 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
64 A
150 A
1.5 V
trr IF = 25A, -di/dt = 100 A/µs
QRM VR = 100V
IRM
200 ns
0.6 µC
6.0 A
IXFK 64N50P
IXFX 64N50P
PLUS 247TM Outline www.DataSheet4U.com
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.00
20.32
2.29
0.25
0.25
20.83
2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFX64N50P
Description PolarHV HiPerFET Power MOSFET
Maker IXYS
Total Page 4 Pages
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