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IXYS
IXYS

IXGH32N90B2 Datasheet Preview

IXGH32N90B2 Datasheet

HiPerFAST IGBT B2-Class High Speed IGBTs

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IXGH32N90B2 pdf
Advance Technical Information
HiPerFASTTM IGBT
IXGH 32N90B2
B2-Class High Speed IGBTs IXGT 32N90B2
V = 900 Vwww.DataSheet4U.com
I CES
= 64 A
VC25 = 2.7 V
t CE(sat)
fi typ
= 150 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
900 V
900 V
±20 V
±30 V
64 A
32 A
200 A
ICM = 64
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
TO-247
TO-268
260 °C
1.13/10Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
3.0 5.0 V
TJ = 25°C
TJ = 150°C
TJ = 125°C
50 μA
750 μA
±100 nA
2.2 2.7 V
2.1 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
G
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High frequency IGBT
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z PFC circuits
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99384(12/05)



IXYS
IXYS

IXGH32N90B2 Datasheet Preview

IXGH32N90B2 Datasheet

HiPerFAST IGBT B2-Class High Speed IGBTs

No Preview Available !

IXGH32N90B2 pdf
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
min.
otherwise specified)
typ. max.
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
IC = IC110 A; VCE = 10 V,
Pulse test, t 300 μs, duty cycle 2 %
18 28
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
1790
121
49
pF
pF
pF
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
89 nC
15 nC
34 nC
Inductive load, TJ = 25°C
IC = IC110 , VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
20 ns
22 ns
260 400 ns
150 ns
2.6 4.5 mJ
Inductive load, TJ = 125°C
IC = IC110 A, VGE = 15 V
VCE = 720 V, RG = Roff = 5 Ω
Note 1
20
22
0.5
3.8
360
330
5.75
ns
ns
mJ
mJ
ns
ns
mJ
(TO-247)
0.42 K/W
0.25
K/W
Note 1: Eon measured with a DSEP 30-12A ultrafast diode clamp.
IXGH 32N90B2
IXGT 32N90B2
www.DataSheet4U.com
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2


Part Number IXGH32N90B2
Description HiPerFAST IGBT B2-Class High Speed IGBTs
Manufacturer IXYS
Total Page 7 Pages
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