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IXYS
IXYS

IXGT40N60C2D1 Datasheet Preview

IXGT40N60C2D1 Datasheet

HiPerFAST IGBT

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IXGT40N60C2D1 pdf
HiPerFASTTM IGBTs
w/ Diode
C2-Class High Speed IGBTs
IXGT40N60C2D1
IXGJ40N60C2D1
IXGH40N60C2D1
VCES =
IC110 =
VCE(SAT)
tfi(typ)
=
600V
40A
2.7V
32ns
TO-268 (IXGT)
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
= 25°C ( Limited by Lead)
= 110°C
TC = 25°C, 1ms
VGE= 15V, TJ = 125°C, RG = 10Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
600
600
±20
±30
V
V
V
V
75 A
40 A
200 A
ICM = 80
VCE VCES
300
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
W
°C
°C
°C
°C
°C
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE= 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
125°C
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
200 μA
3 mA
±100 nA
2.2 2.7 V
1.7 V
© 2010 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-268 (IXGJ)
G
C
E
TO-247 (IXGH)
C (Tab)
G CE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z Very High Frequency IGBT
z Square RBSOA
z High Current Handling Capability
Applications
z Uninterruptible Power Supplies (UPS)
z Switch-Mode and Resonant-Mode
Power Supplies
z AC Motor Speed Control
z DC Servo and Robot Drives
z DC Choppers
Advantages
z High Power Density
z Very Fast Switching Speeds for High
Frequency Applications
z High Power Surface Mountable
Packages
DS99041F(11/10)



IXYS
IXYS

IXGT40N60C2D1 Datasheet Preview

IXGT40N60C2D1 Datasheet

HiPerFAST IGBT

No Preview Available !

IXGT40N60C2D1 pdf
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 30A, VCE = 10V, Note 1
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
VCE = 25V, VGE = 0V, f = 1MHz
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
Inductive load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 400V, RG = 3Ω
Note 2
TO-247 & TO-268
Reverse Diode (FRED)
IXGT40N60C2D1 IXGJ40N60C2D1
IXGH40N60C2D1
Characteristic Values
Min.
Typ. Max.
TO-247 Outline
20 36
S
2500
220
54
pF
pF
pF
123
P
95 nC
14 nC
36 nC
18 ns
20 ns
90 140 ns
32 ns
0.20 0.37 mJ
18 ns
20 ns
0.60 mJ
130 ns
80 ns
0.50 mJ
0.42 °C/W
0.25 °C/W
e
1 = Gate 2 = Collector
3 = Emitter
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
bb12
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
.185
.087
.059
.040
.065
.113
.016
.819
.610
.209
.102
.098
.055
.084
.123
.031
.845
.640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1
4.50
.177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC
242 BSC
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ. Max.
VF IF = 30A, VGE = 0V, Note 1
TJ = 150°C
2.5 V
1.6 V
ItRrrM
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
IVFR
=
=
100V
1A, VGE
=
0V,
-diF/dt
=
100A/μs,
VR
=
30V
TTJJ
=
=
100°C
100°C
100
25
4A
ns
ns
RthJC
0.9 °C/W
TO-268 Leaded Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-268 Outline
1 = Gate 2,4 = Collector
3 = Emitter
1 = Gate 2,4 = Collector
3 = Emitter
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXGT40N60C2D1
Description HiPerFAST IGBT
Maker IXYS
Total Page 6 Pages
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