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IXYS
IXYS

IXTQ22N60P Datasheet Preview

IXTQ22N60P Datasheet

PolarHV Power MOSFET

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IXTQ22N60P pdf
PolarHVTM
Power MOSFET
IXTQ 22N60P
IXTV 22N60P
IXTV 22N60PS
V
DSS
ID25
RDS(on)
www.DataSheet4U.com
= 600 V
= 22 A
330 m
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V
DSS
VDGR
VGS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Tranisent
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
600
600
±20
±30
22
66
22
40
1.0
10
400
-55 ... +150
150
-55 ... +150
300
250
V
V
G
V DS
V
A
A PLUS220 (IXTV)
A
mJ
J
V/ns
G
D
S
PLUS220SMD (IXTV_S)
(TAB)
D (TAB)
W
°C
°C
°C G
°C S
°C
D (TAB)
Md
Weight
Mounting torque (TO-3P)
TO-3P
PLUS220 & PLUS220SMD
1.13/10 Nm/lb.in.
6g
5.0 g G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
600 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
330 m
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99250B(04/05)



IXYS
IXYS

IXTQ22N60P Datasheet Preview

IXTQ22N60P Datasheet

PolarHV Power MOSFET

No Preview Available !

IXTQ22N60P pdf
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
IXTQ 22N60P IXTV 22N60P
IXTV 22N60PS
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
Min. Typ. Max.
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TO-3P (IXTQ) Outline
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-3P)
15 21
S
3600
305
38
pF
pF
pF
20 ns
20 ns
60 ns
23 ns
105 nC
25 nC
55 nC
0.31 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
22 A
66 A
1.5 V
trr IF = 22A
-di/dt = 100 A/µs
QRM VR = 100V
410 ns
4.0 µC
PLUS220SMD
EA
E1 L2 A1
E1
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
PLUS220 (IXTV) Outline
E
E1
L2
A
A1
E1
D
L3
L1
L
D1
3X b c
2X e A2
Terminals: 1 - Gate
3 - Source
Drain
2 - Drain
TAB -
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXTQ22N60P
Description PolarHV Power MOSFET
Maker IXYS
Total Page 5 Pages
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IXTQ22N60P pdf
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