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R0990LC08B Datasheet Preview

R0990LC08B Datasheet

Distributed Gate Thyristor

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R0990LC08B pdf
Date:- 01 August 2012
Data Sheet Issue:- 3
Distributed Gate Thyristor
Type R0990LC08x
(Old Type Number: R270CH04-08)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
800
900
800
900
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Maximum rate of rise of on-state current (repetitive), (note 6)
Maximum rate of rise of on-state current (non-repetitive), (note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
990
652
373
2001
1627
11000
12000
605×103
720×103
1000
1500
5
2
30
-40 to +125
-40 to +150
UNITS
V
V
V
V
UNITS
A
A
A
A
A
A
A
A2s
A2s
A/µs
V
W
W
°C
°C
Data Sheet. Type R0990LC08x Issue 3
Page 1 of 12
August 2012



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R0990LC08B Datasheet

Distributed Gate Thyristor

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R0990LC08B pdf
Characteristics
Distributed Gate Thyristor Type R0990LC08x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
(note 3)
Mounting force
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
0.4
1.0
90
40
55
1.55
10
12
-
-
-
340
1.84 ITM=1400A
1.35
0.35
- VD=80% VDRM, Linear ramp, Gate o/c
70 Rated VDRM
70 Rated VRRM
3.0
Tj=25°C
300
VD=10V, IT=3A
0.25
1000
1.0
2.0
Rated VDRM
Tj=25°C
VD=67% VDRM, ITM=1500A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
105
- ITM=1000A, tp=1000µs, di/dt=60A/µs,
- Vr=50V
-
-
-
0.032
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
IITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
Double side cooled
0.064 Single side cooled
20
- Outline option LC
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering
information for details of tq codes.
3) For other clamp forces, please consult factory
Data Sheet. Type R0990LC08x Issue 3
Page 2 of 12
August 2012


Part Number R0990LC08B
Description Distributed Gate Thyristor
Maker IXYS
Total Page 12 Pages
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