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IXYS Corporation
IXYS Corporation

DSEI2x61-10B Datasheet Preview

DSEI2x61-10B Datasheet

Fast Recovery Epitaxial Diode

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DSEI2x61-10B pdf
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x 61
IFAVM = 2x 60 A
VRRM = 1000 V
trr = 35 ns
VRSM
V
1000
VRRM
V
1000
Type
DSEI 2x 61-10B
miniBLOC, SOT-227 B
E72873
Symbol
IFRMS
IFAVM ÿÿx
IFRM
IFSM
I2t
TVJ
TVJM
Tstg
Ptot
VISOL
Md
Weight
Symbol
IR
VF
VT0
rT
RthJC
RthCK
trr
IRM
Test Conditions
Maximum Ratings (per diode)
TVJ = TVJM
TC = 50°C; rectangular, d = 0.5
tP < 10 ms; rep. rating, pulse width limited by TVJM
TVJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TC = 25°C
50/60 Hz, RMS
IISOL £ 1 mA
Mounting torque
Terminal connection torque (M4)
100
60
800
500
540
450
480
1150
1200
1000
950
-40...+150
150
-40...+150
180
2500
1.5/13
1.5/13
30
A
A
A
A
A
A
A
A2s
A2s
A2s
A2s
°C
°C
°C
W
V~
Nm/lb.in.
Nm/lb.in.
g
Test Conditions
Characteristic Values (per diode)
typ. max.
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
3
0.5
14
1.8
2.3
1.43
6.1
0.7
0.05
mA
mA
mA
V
V
V
mW
K/W
K/W
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C
VR = 540 V; IF = 60 A; -diF/dt = 480 A/ms
L £ 0.05 mH; TVJ = 100°C
35
32
50 ns
36 A
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Features
q International standard package
miniBLOC (ISOTOP compatible)
q Isolation voltage 2500 V~
q 2 independent FRED in 1 package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low I -values
RM
q Soft recovery behaviour
Applications
q Antiparallel diode for high frequency
switching devices
q Anti saturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating and melting
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation
q Low voltage peaks for reduced
protection circuits
q Low noise switching
q Low losses
q Operating at lower temperature or
space saving by reduced cooling
1-2



IXYS Corporation
IXYS Corporation

DSEI2x61-10B Datasheet Preview

DSEI2x61-10B Datasheet

Fast Recovery Epitaxial Diode

No Preview Available !

DSEI2x61-10B pdf
DSEI 2x 61, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions
Dim.
Millimeter
Min. Max.
A 31.50
B 7.80
31.88
8.20
C 4.09
D 4.09
4.29
4.29
E 4.09
F 14.91
4.29
15.11
G 30.12
H 37.80
30.30
38.20
J 11.68
K 8.92
12.22
9.60
L 0.76
M 12.60
0.84
12.85
N 25.15
O 1.98
25.42
2.13
P 4.95
miniBLOC SOT-227 B
Q 26.54
R 3.94
M4 screws (4x) supplied S 4.72
5.97
26.90
4.42
4.85
T 24.59
U -0.05
25.07
0.1
V 3.30
W 0.780
4.57
0.830
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.489
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
0.130
19.81
0.180
21.08
© 2000 IXYS All rights reserved
2-2


Part Number DSEI2x61-10B
Description Fast Recovery Epitaxial Diode
Maker IXYS Corporation
Total Page 2 Pages
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