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IXYS Corporation
IXYS Corporation

IXBH15N160 Datasheet Preview

IXBH15N160 Datasheet

(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

No Preview Available !

IXBH15N160 pdf
Hwwiwg.DahtaSVheoet4lUta.cogme BIMOSFETTM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 15N140
IXBH 15N160
VCES = 1400/1600 V
IC25 = 15 A
VCE(sat) = 5.8 V typ.
tfi = 40 ns
C TO-247 AD
GG
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
M
d
Weight
Conditions
Maximum Ratings
15N140 15N160
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1400
1400
1600
1600
±20
±30
V
V
V
V
TC = 25°C,
T
C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8•VCES
Clamped inductive load, L = 100 mH
15
9
18
ICM = 18
A
A
A
A
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
150
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
1.15/10 Nm/lb.in.
6g
Features
• International standard package
JEDEC TO-247 AD
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Symbol
BVCES
VGE(th)
ICES
IGES
V
CE(sat)
Conditions
IC = 1 mA, VGE = 0 V
IC = 1 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
15N140
15N160
1400
1600
4
V
V
8V
TJ = 25°C
TJ = 125°C
100 mA
0.1 mA
± 500 nA
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
TJ = 125°C
5.8 7.0 V
7.7 V
© 2000 IXYS All rights reserved
1-4



IXYS Corporation
IXYS Corporation

IXBH15N160 Datasheet Preview

IXBH15N160 Datasheet

(IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

No Preview Available !

IXBH15N160 pdf
IXBH 15N140
IXBH 15N160
wSwywm.bDoatlaSheetC4Uo.ncodmitions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies
C
oes
Cres
Q
g
t
d(on)
tri
td(off)
tfi
RthJC
RthCK
V = 25 V, V = 0 V, f = 1 MHz
CE GE
I = 9 A, V = 600 V, V = 15 V
C CE
GE
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH,
V
CE
=
960
V,
R
G
=
47
W
1200
80
11
45
200
60
180
40
0.25
pF
pF
pF
nC
ns
ns
ns
ns
0.83 K/W
K/W
Reverse Conduction
Symbol
VF
Conditions
IF = IC90, VGE = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.8 5 V
TO-247 AD Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
2-4


Part Number IXBH15N160
Description (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Maker IXYS Corporation
Total Page 4 Pages
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IXYS Corporation
IXBH15N160 pdf






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