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IXYS Corporation
IXYS Corporation

IXFA12N50P Datasheet Preview

IXFA12N50P Datasheet

Polar MOSFETs

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IXFA12N50P pdf
Advance Technical Information
IXFA 12N50P
IXFP 12N50P
PolarHVTM Power
MOSFETwww.DataSheet4U.com
IXFA 12N50P
IXFP 12N50P
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
trr
500
12
0.5
200
V
A
Ω
ns
Symbol
VDSS
VDGR
VGSM
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
Continuous
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings TO-263 (IXFA)
500 V
500 V
± 40
± 30
12
20
12
24
600
20
V
V
G
S
A
A
A
mJ
mJ
V/ns
TO-220 (IXFP)
G DS
(TAB)
(TAB)
200
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
3g
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 1 mA
IGSS VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
±100 nA
5 μA
150 μA
500 mΩ
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99436(09/05)



IXYS Corporation
IXYS Corporation

IXFA12N50P Datasheet Preview

IXFA12N50P Datasheet

Polar MOSFETs

No Preview Available !

IXFA12N50P pdf
Symbol
Test Conditions
www.DataSheet4U.com
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
gfs
Ciss
Coss
Crss
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
13
1690
182
16
S
pF
pF
pF
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 50 Ω (External)
22 ns
27 ns
65 ns
20 ns
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
29 nC
11 nC
10 nC
RthJC
RthCK
(TO-220)
0.25
0.62 K/W
KW
Source-Drain Diode
Symbol
IS
ISM
VSD
trr
QRM
IRM
Test Conditions
VGS = 0 V
Repetitive
IF = IS, VGS = 0 V, Note 1
IF = 22 A, -di/dt = 100 A/μs
VR = 100 V, VGS = 0 V
Characteristic Values
TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
44 A
132 A
1.5 V
200 ns
0.4 μC
4f A
IXFA 12N50P
IXFP 12N50P
TO-263 (IXTA) Outline
Pins: 1 - Gate 2, 4 - Drain
3 - Source
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
7.11
9.65
8.13
9.65
6.86
2.54
10.29
8.13
BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380
.270
.100
.405
.320
BSC
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
.018 .029
TO-220 (IXTP) Outline
Note 1: Pulse test, t 300 μs, duty cycle d 2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6771478 B2


Part Number IXFA12N50P
Description Polar MOSFETs
Maker IXYS Corporation
Total Page 5 Pages
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